As the next step in their strategic co-operation, STMicroelectronics of Geneva, Switzerland has reached a multi-year agreement from 2026 to supply its silicon carbide (SiC) power modules.
power
Today's MOSFET innovations respond to the demand for high-power devices, efficient power supplies, and widespread electrification.
At the 70th annual IEEE International Electron Devices Meeting (IEDM 2024) in San Francisco, CA, USA (7–11 December), nanoelectronics research center imec of Leuven
elligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has agreed to acquire the silicon carbide junction field-effect transistor (SiC JFET) technology business
STMicroelectronics (ST) and Innoscience have announced a groundbreaking collaboration in gallium nitride (GaN) power products, combining their technological and manufacturing strengths to drive innovation and accelerate market adoption of GaN solutions.
Geneva-based STMicroelectronics (ST) and China’s Innoscience Technology have entered into a collaborative agreement to advance gallium nitride (GaN) power semiconductor technology.